| 摘要 |
PURPOSE:To increase the memory voltage by setting the voltage applied to the gate of the memory capacity higher than the power voltage used to the semiconductor memory circuit. CONSTITUTION:When voltage VDD changed from the break state to the make state, nodes A and B are charged up to VDD-VT and VDD-2VT each by transistor Tr7. Here VT is the voltage required to form the channel of the semiconductor memory circuit. In that case, if output phi of the oscillator circuit reses up simultaneously, node B receives supply of the charge through Tr6 to be boosted. Then with the fall of output phi, node A voltage falls down but no fall is given to the voltage of node B since Tr6 becomes nonconductive. Accordingly, the voltage of node B rises up gradually to the level lower than the voltage of node A by the threshold voltage by the repetition of output phi. Then voltage V'DD becomes to 2(VDD-VT), thus increasing the memory voltage. |
