| 摘要 |
PURPOSE:To obtain a semiconductor device of a solid multilayer structure by using a wafer in which a single crystal insulating layer and a single crystal semiconductor layer are epitaxially grown in sequence on a single crystal semiconductor substrate. CONSTITUTION:The Al2O3 layer 2 and n-type Si layer 3 are epitaxially grown on the p- type Si substrate 1, and the surface is covered with SiO2 layer 4. Next it is etched and opened in turn to expose the substrate 1, the SiO2 layer 4' and polysilicon layer 5 are laminated on it. The resist mask 6 is provided, the gate 5Gn and the gate insulating film 4Gn are shaped, the n<+>-layers 7n, 8n are formed by ion implantation. The mask 6 is removed, the resist mask 11 is provided, a laminated body of both the gate 5Gp and the gate insulating film 4Gp is selectively shaped, the p<+>- type diffusion layers 9p, 10p are formed. The mask 11 is removed, the insulating film, electrodes and wiring are provided in accordance with a specification. At this time, the step part is made specially wide or the insulating film of the n channel part is made thick to prevent the breakage of wiring. |
