| 摘要 |
<p>Surface recombination current in GaAs devices is reduced by means of a semi-insulating oxygen, iron or chromium doped monocrystalline layer of AlGaAs grown by MBE. The AlGaAs layer is grown on a GaAs body (10) and is then masked. Application, for example by diffusion or ion implantation of suitable impurities through a window in the mask (18) converts the exposed portions (16.2) of the AlGaAs layer (16) to low resistivity and modifies the conductivity of the underlying zone of the GaAs body (10). The peripheral portion (16.1) of the AlGaAs layer, however, remain semi-insulating and are effective to reduce the surface recombination velocity - diffusion length product by more than an order of magnitude. </p> |
