| 摘要 |
PURPOSE:To readily control the delicate characteristics of a semiconductor device by coating an emitter deposited layer on a silicon substrate when forming a bipolar element, perforating emitter, base and collector electrode openings on the layer, coating a polycrystalline silicon layer on the layer, and coating Au compound solution thereon to thereby diffuse the Au therein. CONSTITUTION:An n-type layer 12 is epitaxially grown on a silicon substrate 11, a p-type base region 13 is diffused in the layer 12, an emitter opening is perforated at the region 13, P is deposited and heat treated through the opening, thereby forming a deposited region 9 in the region 13. Then, collector, base and emitter electrode openings 17 are perforated on the SiO2 film 10 thus formed on the entire surface of the substrate 11. A polycrystal silicon layer 15 is accumulated on the entire surface of the film 10, and an alcoholic solution containing AuCl3 and SiO2 is coated on the layer 15, thereby forming an Au coating film 16. Thereafter, this substrate is heat treated at approx. 1,100 deg.C. Then, An is diffused in the film 16 together with the region 9, thereby forming an n-type emitter region 14. Then, the film 16 is removed with 10%-fluoric acid. Then, laminated electrodes 18 of aluminum silicide and aluminum are coated on the layers 12, the regions 13 and 14.
|
