发明名称 |
RADIATIONNSENSITIVE TRANSISTOR DEVICE |
摘要 |
<p>A bilateral optically coupled phototransistor includes an infrared emitting diode coupled with a light sensitive transistor. The transistor includes symmetrical interdigitated emitter and collector regions separated by a light sensitive base. Diffused, epitaxial and thermal gradient migration structures are described. Applications are illustrated for variable resistor and analog switch modes of operation.</p> |
申请公布号 |
JPS55102281(A) |
申请公布日期 |
1980.08.05 |
申请号 |
JP19790153689 |
申请日期 |
1979.11.29 |
申请人 |
GEN ELECTRIC |
发明人 |
HAINGU CHIYOU CHIYU;UIRIAMU HAABAATO SAMU SAADO;ROBAATO AICHITSUHI CHIEN |
分类号 |
H01L31/10;H01L31/11;H01L31/12;H01L31/16;H01L31/167 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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