发明名称 RADIATIONNSENSITIVE TRANSISTOR DEVICE
摘要 <p>A bilateral optically coupled phototransistor includes an infrared emitting diode coupled with a light sensitive transistor. The transistor includes symmetrical interdigitated emitter and collector regions separated by a light sensitive base. Diffused, epitaxial and thermal gradient migration structures are described. Applications are illustrated for variable resistor and analog switch modes of operation.</p>
申请公布号 JPS55102281(A) 申请公布日期 1980.08.05
申请号 JP19790153689 申请日期 1979.11.29
申请人 GEN ELECTRIC 发明人 HAINGU CHIYOU CHIYU;UIRIAMU HAABAATO SAMU SAADO;ROBAATO AICHITSUHI CHIEN
分类号 H01L31/10;H01L31/11;H01L31/12;H01L31/16;H01L31/167 主分类号 H01L31/10
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