| 摘要 |
PURPOSE:To enlarge the rate effect and increase the gate trigger speed by an externally fitted resistor, by setting the short pattern of the main thyristors and reducing the area of the 3rd base region of the auxiliary thyristors. CONSTITUTION:An n1 layer consists of an n-type 20-30OMEGAcm silicon substrate, and by operating punch-through diffusion of a p-type impurity from both sides of the substrate, it is isolated. Next, by the conventional selective diffusion method, main thyristors P1n1, P2n2 and auxiliary thyristors P1n2, P3n3 are produced. Next, cathode 2, made of Al, wiring 3, which passes a part of the p-layer, which is to become the gate of the main thyristors, and gate electrode 5 of the auxiliary thyristors are formed. Cathode 2 is connected to n2-layer and p2-layer, and the part connected to p2-layer becomes a short part. |
