发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To secure a good contact state in a semiconductor device which has a swollen electrode on one principal face and a metal electrode pressure welded to an external electrode on the other principal face, by making the cross-sectional shape of the electrode on the other principal face into a convex shape. CONSTITUTION:A semiconductor pellet 6 has a surface electrode 1 and a back face electrode 2 which are pressure welded to external electrodes 3 and 3' of gold, silver, etc. As the pellet 6 has a distant part 5, if a peeling phenomenon occurs on the back face electrode in the separation process of the semiconductor pellet, the space 5 absorbs it, therefore, the contact state of the pellet 6 with the external electrode 3 is kept in a good state.
申请公布号 JPS5599730(A) 申请公布日期 1980.07.30
申请号 JP19790007991 申请日期 1979.01.25
申请人 NIPPON ELECTRIC CO 发明人 NISHII TOSHINORI
分类号 H01L21/52;H01L21/58 主分类号 H01L21/52
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