| 摘要 |
<p>PURPOSE:To make it unnecessary to provide a substrate electrode layer on a semiconductor substrate and also make wire bonding for leads unnecessary by bringing a substrate potential supply lead into direct contact with substrate bonding metal layer 11. CONSTITUTION:The inner end of substrate potential supply lead 16 is bent at right angle to the bottom of center depression 10a of base 10 so that it comes into direct contact with substrate bonding metal layer 11 on the bottom of the center depression when it is bonded with molten glass. In this structure, when silicon semiconductor substrate 18, as an IC chip, is bonded to metal layer 11 by using Au-Si eutectic, substrate potential is directly supplied to substrate 18 via lead 16. It is necessary that the inner end of signal transmission lead 14 should be connected to the corresponding electrode layer on substrate 18 by means of bonding wire 20.</p> |
