| 摘要 |
A process is described for forming a plurality of polysilicon runs on the surface of a semiconductor substrate, such as a silicon substrate, at least one of the polysilicon runs having a resistor portion formed therein, and at least one of the polysilicon runs forming the conductive gate electrode of a self-aligned insulated silicon gate field effect device. A specific embodiment of the process involves forming protective oxide layer on the substrate with depressions or wells therein to define active area regions of field effect devices, depositing a layer of polysilicon to overly the protective oxide layers, implanting dopant ions in the polysilicon layer to establish an initial conductivity of the polysilicon corresponding to resistor material, patterning the polysilicon layer to define desired polysilicon runs, with at least one of the polysilicon runs traversing across the gate region and gate oxide of a field effect device to serve as the gate electrode thereof; establishing an oxide layer over the surface and then removing oxide to both expose the active areas of the field effect devices where not protected by the polysilicon gate electrodes and also to define a remaining resistor mask of the oxide which overlies and protects the resistor portions of the polysilicon runs; and applying dopant to render the unprotected portions of the polysilicon runs highly conductive relative to the oxide masked resistor portions thereof and to simultaneously dope the exposed active areas of field effect devices.
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