| 摘要 |
PURPOSE:To take out light radiation of each LED from a single window, forming multi-layer of LEDs whose luminous oeak differs by degrees, on one semiconductor substrate. CONSTITUTION:Based on an InP substrate, layers n<+>-InP 2-1-2-4, p-InGaAsP 3-1-3-4, n-InGaAsP 4-1-4-4, p-InGaAsP 5-1-5-4, InP high-resistance 6-1-6-4 and p-layers 7-1-7-4, as well as electrodes 8-1-8-4 and 9-1-9-4 are arranged in the given order, and the round luminous face 10 and wings 11 and 11' for taking out electrode are provided. Electrodes 8 are taken out from each wings 11 of respective layers 5, while electrodes 9 being taken out form each wings 11'. Concentration of layer 7 is selected to be in the middle of concentrations of layers 2 and 4. Constituent ratio of InGaAsP is one and the same in one unit. However, if constituent ratio is changed so that upper unit has broader band gap then the lower unit, the upper units do not absorb light radiated, thus the light radiation of wavelength lambda1-lambda2 from the face 10 become possible. |
