发明名称 THIN FILM FORMING METHOD
摘要 PURPOSE:To obtain a thin film of high orientation properties at a high speed while preventing a temp. rise of a substrate by setting a magnet behind or by the side of the substrate in formation of the film on the substrate by ion plating. CONSTITUTION:Vacuum deposition substance 2 is put into boat 1, and a negative voltage is applied to substrate 3. Thus, plasma is generated with residual gas, and particles of substance 2 sputtered from heated boat 1 are ionized and deposited on substrate 3. A temp. rise of substrate 3 is prevented by magnet 4 set behind substrate 3, that is, at the reverse side of the evaporation source, and the quality and orientation properties of the thin film deposited are considerably enhanced. In addn., the film deposition speed is increased.
申请公布号 JPS5591971(A) 申请公布日期 1980.07.11
申请号 JP19780163765 申请日期 1978.12.28
申请人 SUWA SEIKOSHA KK 发明人 KAWACHI AKIHIKO
分类号 C23C14/24;C23C14/32;C23C14/54 主分类号 C23C14/24
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