发明名称 LPCVD SYSTEMS HAVING IN SITU PLASMA CLEANING
摘要 Process for cleaning wall deposits from a furnace tube (11) used in a low pressure chemical vapor film deposition system (10). The cleaning of the tube is carried out in situ in the furnace by creating a deposit etching plasma within the tube. The plasma is generated by introducing a suitable gas into the tube and applying RF energy to elements (32) located along selected portions of the tube for coupling the RF energy to the gas.
申请公布号 WO8001363(A1) 申请公布日期 1980.07.10
申请号 WO1979US01127 申请日期 1979.12.27
申请人 NCR CORP 发明人 ROMANO MORAN R
分类号 C23C16/44;H01J37/32;H01L21/205;H01L21/31;(IPC1-7):08B7/00;08B9/00;01J17/22 主分类号 C23C16/44
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