发明名称 |
LPCVD SYSTEMS HAVING IN SITU PLASMA CLEANING |
摘要 |
Process for cleaning wall deposits from a furnace tube (11) used in a low pressure chemical vapor film deposition system (10). The cleaning of the tube is carried out in situ in the furnace by creating a deposit etching plasma within the tube. The plasma is generated by introducing a suitable gas into the tube and applying RF energy to elements (32) located along selected portions of the tube for coupling the RF energy to the gas. |
申请公布号 |
WO8001363(A1) |
申请公布日期 |
1980.07.10 |
申请号 |
WO1979US01127 |
申请日期 |
1979.12.27 |
申请人 |
NCR CORP |
发明人 |
ROMANO MORAN R |
分类号 |
C23C16/44;H01J37/32;H01L21/205;H01L21/31;(IPC1-7):08B7/00;08B9/00;01J17/22 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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