| 摘要 |
PURPOSE:To drive charge by a clock and to transfer the charge under first electrode to next stage by providing second transfer electrode group insulated between electrode group forming potential wells having potential gradient for accelerating the charge in transfer direction. CONSTITUTION:A plurality of resistive electrodes 24 are arranged through an oxide film 23 in an n-type layer 22 on a p-type silicon substrate 21. The electrode 24 is a low density polycrystalline silicon layer and has high density electrodes 25a, 25b at both ends thereof. An aluminum electrode 25 is provided to be insulated between the electrodes 24 to thereby form a storage electrode 27. A layer 28 is an output gate electrode. A p-type layer 29 is formed at one side on the surface of the n-type layer 22 under the electrodes 26, 27 to thereby form a potential barrier for preventing charge from flowing. A DC low level voltage is applied to the electrode 25a, and a DC high level voltage is applied to the electrode 25b. A clock pulse is applied to the electrode 26, and predetermined pulse is applied to the electrode 27. With this configuration potential gradient for accelerating the charge Q in its transfer direction is formed under the respective electrodes 24. Thus, the time for transferring the charge at a distance L when the electrodes 24 have N stages is 1/N of the conventional time to thereby realize a simple drive system. |
