发明名称 PLASMA SURFACE TREATMENT DEVICE
摘要 PURPOSE:To provide a uniform surface treatment by a mechanism wherein a discharge restricting plate is installed at the center area on at least one electrode plate, and reaction gas is made uniform by being supplied through small holes on the lead edge of guide pipe protruded to the center of the electrode plate. CONSTITUTION:In a plasma surface treatment device 1, and upper 2 and a lower 3 electrode plates are installed. A reaction gas guide pipe 4 is passed through the electrode 3 center, and the end of the pipe 4 is attached to a discharge regulation plate 5 having a diameter about 1/4 of the electrode 2. Materials to be treated, such as wafer, are placed on the electrode 3. Reaction gas is uniformly distributed in discharge space from many small holes on the leading edge of the pipe 4. This prevents discharge from concentrating on the center area of discharge space, enabling uniform surface treatment to be performed, and eliminates electrode surface dirtiness.
申请公布号 JPS5589466(A) 申请公布日期 1980.07.07
申请号 JP19780159885 申请日期 1978.12.27
申请人 HITACHI LTD 发明人 HOSODA SHIYOUZOU
分类号 H01J37/32;C23C16/50;H01L21/31 主分类号 H01J37/32
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