| 摘要 |
PURPOSE:To heighten adhesiveness with a substrate and to form a pattern with high resolution by projecting a prescribed quantity of short wavelength light for a short time on a resist thin film via reticle. CONSTITUTION:The pattern is formed on the substrate on which a resist film is formed by projecting the short wavelength light less than 300nm in 2J/cm via the reticle. Also, the pattern is formed by setting the thickness of the resist film at 100Angstrom -1mum. At the time of developing the resist material, a reaction product is removed selectively by a developing processing after generating decomposition reaction or low molecular reaction in macromolecule polymer which exists in the exposure part of the resist material formed on the substrate, thereby, the pattern with high resolution can be obtained. |
