发明名称 PREPARATION OF SEMICONDUCTOR LUMINESCENT DEVICE
摘要 PURPOSE:To improve green luminescent efficacy largely, by revising combination of boat material and atmospheric gas, controlling impurities distribution at pn-joint, raising injection efficiency and increasing luminescent center concentration. CONSTITUTION:A GaP substrate 6 is placed on an indentation of a carbon boat 1, a solution 7 is poured into a carbon rectifier 3 lined with quartz, and then, it is placed on the boat and charged into a furnace. The furnace is filled with H2 gas, and after it reached a prescribed temperature, a solution 7 is made to contact the substrate 6, and then, it is cooled to grow an n-layer. At this time, donor is Si which was isolated as a result of reaction between quartz and H2. Now, when NH3 gas is supplied to Ar atmosphere, Si which is the donor reacts with NH3 to reduce the concentration and from a p-layer by residual acceptor C, and then, it is cooled, a p-layer is laminated and NH3 is stopped at a prescribed temperature for cooling to the room temperature. To thus prepared GaP substrate, a large quantity of N2 can be effectively introduced whereby it becomes possible to produce a green luminescent GaP element of excellent characteristics.
申请公布号 JPS5577185(A) 申请公布日期 1980.06.10
申请号 JP19780150000 申请日期 1978.12.06
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 IIZUKA YOSHIO;FURUKAWA TSUNEO;NAITOU MAKOTO
分类号 H01L21/208;H01L33/30;H01L33/40 主分类号 H01L21/208
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