| 摘要 |
An improved field effect transistor sense amplifier uses a cross-coupled pair of first transistors (Q1, Q2) with separate third and fourth transistors (Q3, Q4) connected by the sources (12, 14) to each of one of cross-coupled terminals (12, 14) of the cross-coupled pair (Q1, Q2). Read circuitry (Q7, Q8) is connected directly to the cross-coupled terminals (12, 14) of the cross-coupled pair (Q1, Q2). Write circuitry (Q9, Q10) is connected to the drains (18, 22) of the third and fourth transistors (Q3, Q4). |
