PREPARATION OF COMPOUND SEMICONDUCTOR LUMINOUS ELEMENT

摘要

PURPOSE:To enable to etch both simultaneously by treating a p<+>-type layer with a low speed etching liquid while an n-type compound semiconductor crystal fracture layer with a high speed etching liquid. CONSTITUTION:The ratio of etching speed of a p<+>-type layer and an n-type GaP crystal becomes smaller with increased concentration of hydrochrolific acid or nitric acid and with lowered liquid temperature. Under a certain condition this is reversed and the etching speed of an n-type GaP crystal fracture layer becomes greater than that of the p<+>-type layer. Through said etching condition no measure for protecting the p-type layer is required thus enabling to etch simultaneously the p<+>-type layer as well as n-type GaP crystal.