| 摘要 |
<p>PURPOSE:To form high-quality activiated layer uniform in layer thickness and less in defects by forming on the thin buffer layer of the base plate GaAs a dual hetero structure which incorporates plural narrow activated semiconductor layer. CONSTITUTION:The solution reservior 13 of the boat for growth 7 contains, for example, the first growth solution 8 with a mixture of Ga and GaAs, the second growth solution 9 with a mixture of Ga, Al and GaAs at AlxGax-1As (x=0.3), cleaning solution 10, the third growth 11 with a mixture of Ga, Al and GaAs at AlxGax-1As (x=0.04) and the fourth growth solution 12 with a mixture of Ga and GaAs. By gradually transferring GaAs base plate crystal 1 in the boat for growth 7, formation is made of -0.2mum n-type GaAs buffer layer 14, -20mum n-type Al0.3 Ga0.7AS layer 3, max. 0.15mum p-type Al0.04Ga0.96AS activated layer 4, -1.0mum p-type Al0.3Ga0.7AS layer 5 and -1.0mum n-type GaAs layer 6.</p> |
