Semiconductor mfr. using wave or particle beam - to adjust characteristic via thermal energy, for integrated resistors of HF transistors

摘要

The semiconductor element comprises a semiconductor substrate (1) which is doped to obtain at least one surface zone (2) of a given conductivity type. The electrical characteristics are measured via a test figure (3) formed in the surface of the substrate (1) and at the same time an intensive wave or particle beam is directed onto the surface, for heat treatment to vary the doping distribution or conductivity, until the measured characteristics obtain their required values. An electron beam may be used for the required heat treatment with deflectors for scanning the beam across the surface of the substrate. The system can be used to obtain high ohmic resistors in integrated circuits, or bipolar h.f. transistors.