发明名称 PHOTOCONDUCTIVE STRUCTURES
摘要 A photoconductive structure comprises an electrically insulating substrate bearing an evaporated metal electrode pattern, and a 60 to 150 nm thick polyimide film disposed between a sintered cadmium selenide layer and the substrate with the superposed electrode pattern. In the absence of the polyimide film, there had been unacceptable attack of the electrode structure and of silica substrates by the cadmium selenide.
申请公布号 GB2033148(A) 申请公布日期 1980.05.14
申请号 GB19780041981 申请日期 1978.10.26
申请人 PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES LTD 发明人
分类号 H01J29/45;H01L31/0216;H01L31/0224;H01L31/0264;(IPC1-7):01L23/48 主分类号 H01J29/45
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