| 摘要 |
PURPOSE:To enhance the linearity, the sensitivity, the accuracy, the interchangeability and other factors by securing the serial connection for the plural number of the semiconductor pn-junction diode formed on the same substrate. CONSTITUTION:The plural number of the pn-junction diode are formed on semiconductor substrate 1 and then connected in series to each other. At the same time, Zener diode DZ is formed at part of the substrate via part of p--type diffusion region 17 and then connected backward and in parallel to one of pn-junction diodes Di1- Di3 connected in series. Thus in case diodes Di1-Di3 receive the temperature measurement with the forward voltage, the current flowing backward is blocked by DZ to prevent the fluctuation of the temperature characteristics. As a result, a temperature sensor can be obtained with a high linearity, sensitivity, accuracy, interchangeability and other factors. |
