| 摘要 |
<p>PURPOSE:To operate signal transmission between chips by light, by providing a photoelectric converter element in a part of the input/output of a semiconductor chip including IC. CONSTITUTION:After n<->-layer 2 and n<+> surface layer have been grown on n<+> base plate 1, p<+>-layers 3, 4 are formed by selective diffusion. These layers and their concentrations are: n<+>-layer, 10<17>-10<20>cm<-3>; n<->-layer, 10<13>-10<16>cm<-3>; and p<+>- layer, 10<17>-10<20>cm<-3>. The injector is connected with pnp bipolar transistor, the inverter is connected with n channel electrostatic induction transistor SIT, and the output terminal is connected with p<+>n<->n<+> LED. The concentration of SIT channel is selected, the channel is completely pinched off by the diffusion potential between the gate channels, and thereby a high potential barrier is formed. In SIT, when the gate is at a low level, the drain assumes a high level, and light is emitted by LED and is let to the input terminal of the other chip by optical fiber 9.</p> |
