发明名称 METHOD OF EPITAXIAL GROWTH AT LIQUID PHASE
摘要 PURPOSE:To raise the velocity of growth, by placing a growing solution in a first zone of temperature and placing a growing substrate in a second zone of temperature lower than the former temperature. CONSTITUTION:A substrate 1 is supported on a fixed section 2. A growing solution 3 is contained in a movable section 4. These sections are placed in a furnace so that the sections are set under a temperature distribution as shown in Fig. (b). After a prescribed time, the growing solution 3 is brought into contace with the substrate 1 to cause growth.
申请公布号 JPS5555521(A) 申请公布日期 1980.04.23
申请号 JP19780127881 申请日期 1978.10.19
申请人 FUJITSU LTD 发明人 NAKAJIMA KAZUO
分类号 C30B19/08;H01L21/208;H01L33/30;H01S5/00 主分类号 C30B19/08
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