| 摘要 |
The coating composition contains a solution of a polyamidic acid in an organic solvent and at least one filler material of high dielectric constant selected from rutile, barium titanate and lead zirconate. In one embodiment, the polyamidic acid is a polymeric product of the reaction of a diprimary diamine and a tetracarboxylic dianhydride, and it can be converted into polyimide essentially comprising units <IMAGE> in which the organic radical Q is silicon-free, and R'' is an organic radical. In another embodiment, the polyamidic acid is a copolymeric product of the reaction of a diamine mixture comprising from 85 to 55 mol% of a silicon-free diprimary diamine and the remaining 15 to 45 mol% of a diprimary siloxanediamine, and a tetracarboxylic dianhydride, and can be converted into copolymeric polyimide comprising, in the corresponding molar ratio, the abovementioned units <IMAGE> in which R and R' are hydrocarbon radicals and x is an integer from 1 to 8. The filler material is admixed with the solution and fully distributed therein. For use, a surface of a semiconductor component on which a P-N transition is free is coated with composition, and the polyamidic acid in the coating is subsequently converted into polyimide. |
