| 摘要 |
PURPOSE:To provide a semiconductor integrated circuit device in which each resistor is made to reduce its surface area and the degree of integration is advanced by forming two or more high resistors of multi-crystal silicon material having different resistance values on the semiconductor substrate. CONSTITUTION:A multi-crystal silicon film 3 is adhered to the surface of a silicon substrate 1 with an insulating film as the intermediate. The film 3 is doped with impurities in a density enough for producing resistance in situ as required to obtain a resistor having the maximum, necessary resistance. Then the same film 3 is subjected to patterning to form a wiring portion 4 and resistor portion 5. The resistors 5 are then treated by selective oxidation with heat to form oxide films 6, 12, 14 in their multi-crystalline surfaces in a manner such that those oxide films have different thicknesses from each other, making corresponding resistors 8, 9, 10 have different resistance values. The resistors 9, 10 in which the thicker films 12, 14 have been formed have lower resistance values than the resistor 8 in which the thinner film 6 has been formed since segration usually occurs to the impurities contained in the multi-crystal silicon film during the formation of the oxide films. |
