| 摘要 |
PURPOSE:To eliminate the adverse effect of memory storing characteristics at a semiconductor memory due to the current leakage of SiN4 film by adding an insulating film such as SiO2 further between metal films of the electrode and the Si3N4 film. CONSTITUTION:A p-type source and drain regions 2 and 3 are diffused in an N-type silicon substrate 1 to produce a p channel region in the substrate 1 therebetween. Then, thick field oxide films 7 are coated on the regions 2 and 3, and a thin gate SiO2 film 4 is formed on the channel region surrounded thereby. Then, when the Si3N4 film 5 is coated thereon to further form an electrode metal film 11, an insulating film 11 using SiO2 or the like newly added is interposed between the films 5 and 11. Then, openings are perforated at the film 7, and electrodes 8 and 9 are mounted to the regions 2 and 3. Thus, even if current leakage occurs in the film 5, it can be eliminated by the film 11 retain the memory storing content for long time. |
