发明名称 |
HIGHHFREQUENCY TRANSISTOR INVERTER |
摘要 |
PURPOSE:To effectively lower inverse voltage between a base and emitter of a transistor by means of a condenser connected to both the base and the emitter at a diode which enables only inverse direction by-pass against the high frequency. CONSTITUTION:When a transistor 6 is cut off, the charging charge of a condenser 9 is discharged through a resistance 10 while being bypassed in the inverse direction by a capacity generated between the junction of a diode 13 to high frequency, and partially charged by the capacity formed at a condenser 12 and the both ends of the diode 13. Thus, inverse voltage applied between a base and emitter of the transistor 6 depends upon only the terminal voltage of the condenser 12, and consequently inverse voltage between the base and emitter of the transistor 6 can sufficiently be lowered. |
申请公布号 |
JPS5549984(A) |
申请公布日期 |
1980.04.11 |
申请号 |
JP19780122181 |
申请日期 |
1978.09.30 |
申请人 |
MATSUSHITA ELECTRIC WORKS LTD |
发明人 |
TAKEUCHI HIROYASU;SUGIYAMA YUKIO;TAKAHASHI SHIYUUICHI;SOGA SEIJI |
分类号 |
H02M7/537;H02M7/538;H05B41/24 |
主分类号 |
H02M7/537 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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