发明名称 Power semiconductor protection against supply voltage transients - is performed by inductance and capacitor connected to load and gate (OE 15.12.79)
摘要 <p>The protection circuit is used for semiconductors such as thyristors normally handling high power levels. Protection against supply voltage transients is supplied by an inductance (L) connected into the load to semiconductor current path with a capacitor (C) from the inductance load junction (A) to the control electrode (S) of the semiconductor. Where two thyristors are employed connected in parallel-opposition each thyristor has a capacitor between its gate and anode. A series resistor (R) may be included in the capacitor path, the inductance being common to both thyristors.</p>
申请公布号 FR2436500(A1) 申请公布日期 1980.04.11
申请号 FR19790022573 申请日期 1979.09.10
申请人 SIEMENS AG 发明人
分类号 H01L23/58;H03K17/082;(IPC1-7):01L23/56 主分类号 H01L23/58
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