HALBLEITERVORRICHTUNG

摘要

The device includes a semiconductor substrate contg. semiconducting zone, e.g. a base or emitter zone, which is covered by a polsi layer of which is covered by a metal layer which extends beyond the edges of the polsi layer. The pref. device pres. has a substrate directly covered by an insulating layer provided with a window over the semiconducting zone; and the polsi fills the window and covers the edges of the insulating layer round the window. The polsi is pref. doped with an atom providing n-type or p-type conductivity; or doped with an atom partly diffused into the semiconductor substrate to form semiconducting zone. The polsi layer is pref. used as a resistor or as a wiring layer. The metal layer on the insulating layer is pref. partly removed by selective etching. - In similar conventional devices, the metal covering the edges of the polsi is very thin and mechanical stress is conc. in these zones. Furthermore, the selective etching of metal produces wedge-shaped cavities in this layer so a good bond cannot be obtd. between the layers. The invention eliminates these difficulties.