| 摘要 |
PURPOSE:To improve energy conversion efficiency by making a composition of amorphous Si-oxide semiconductor-metal in such a manner as to add a new oxide semiconductor layer using a amorphous Si obtained from silane content by glow- discharge dissolution method. CONSTITUTION:A mirror finished stainless steel sheet 21 is heated to approximately 350 deg.C in a vacuum, made to glow-discharge at an SiH4:PH4 ratio of 100, 0.5 torr, and covered with approx. 200Angstrom of amorphous Si 22. And then, only SiH4 is supplied at 300 deg.C to be made to glow-discharge, and approx. 23mum of non-crystalline Si23 is formed to perpare a base board 201. The base board 201 is heated or maintained in a reducible atmospher, and approximately 200Angstrom of an oxide semiconductor 24, such as ZnO, is formed the surface, a metallic film 25 of large job function, such as Pt, etc. is formed to approximately 50Angstrom , and further, a reflection preventive film and a collection electrode, etc. are also piled as required. In this structure, as compared with an ordinary Scholtky barrier type element, a solar cell of an extremely good energy conversion efficiency can be obtained, and if the oxide semiconductor layer is formed into 2 layers in a reducible atmosphere, the open voltage is further heightened. |
