发明名称 |
Apparatus for making a single crystal of III-V compound semiconductive material |
摘要 |
An apparatus includes a sealed vessel, a crucible received in the sealed vessel to hold a first molten liquid of III-V compound semiconductive material and a second molten liquid of an encapsulating material overlying the first molten liquid, and floating member having an opening for defining the cross sectional outline of a single crystal while being grown and positioned in the interface between the first and second molten liquids. The floating member is made from a mixed material consisting essentially of at least one of oxides of yttrium and the lanthanum series elements, alumina and silicon nitride each in a prescribed amount.
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申请公布号 |
US4196171(A) |
申请公布日期 |
1980.04.01 |
申请号 |
US19780930696 |
申请日期 |
1978.08.03 |
申请人 |
TOKYO SHIBAURA ELECTRIC CO LTD |
发明人 |
KOMEYA, KATSUTOSHI;NAKAJIMA, MASAHIRO;WATANABE, MASAYUKI |
分类号 |
C04B35/584;C30B15/24;C30B27/02;C30B29/40;H01L21/02;H01L21/18;H01L21/208;H01L33/30;(IPC1-7):B01J17/00;B01J17/20 |
主分类号 |
C04B35/584 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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