发明名称 Apparatus for making a single crystal of III-V compound semiconductive material
摘要 An apparatus includes a sealed vessel, a crucible received in the sealed vessel to hold a first molten liquid of III-V compound semiconductive material and a second molten liquid of an encapsulating material overlying the first molten liquid, and floating member having an opening for defining the cross sectional outline of a single crystal while being grown and positioned in the interface between the first and second molten liquids. The floating member is made from a mixed material consisting essentially of at least one of oxides of yttrium and the lanthanum series elements, alumina and silicon nitride each in a prescribed amount.
申请公布号 US4196171(A) 申请公布日期 1980.04.01
申请号 US19780930696 申请日期 1978.08.03
申请人 TOKYO SHIBAURA ELECTRIC CO LTD 发明人 KOMEYA, KATSUTOSHI;NAKAJIMA, MASAHIRO;WATANABE, MASAYUKI
分类号 C04B35/584;C30B15/24;C30B27/02;C30B29/40;H01L21/02;H01L21/18;H01L21/208;H01L33/30;(IPC1-7):B01J17/00;B01J17/20 主分类号 C04B35/584
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