| 摘要 |
PURPOSE:To manufacture an element of low surface resistance, by performing the gas-phase growth of an n-type CdS containing indium as an impurity on a p-type CdTe substrate maintained in a prescribed range of temperature and by setting the resistivity of the CdS at a prescribed value. CONSTITUTION:A crucible 4 containing a CdS crystal 3 as an evaporated CdS source, another crucible 6 containing metallic indium 5 and the p-type CdTe substrate 8 fitted on a holder 7 are set in the core the tube 2 of an electric furnace 1 so that the crystal 3 is maintained in a temperature range from 800-1110 deg.C, and metallic indium 5 is maintained in a temperature range from 300-800 deg.C and the substrate 8 is maintained in a temperature range from 350-550 deg.C. A gas feed pipe 9 and a gas exhaust pipe 10 are connected to the core tube 2 to fill a reducing gas in the core tube 2. These conditions are kept for a prescribed time so that the CdS and the indium are evaporated, an n-type CdTe layer 15 and an n-type CdS layer 14 are produced on the surface of the substrate 8 and the surface resistance of these layers is set at 10-100OMEGA/ . This results in raising the electromotive force of the element when it is used as a solar battery. |
