| 摘要 |
PURPOSE:To allow a MIS semiconductor circuit device to oscillate definitely with small power consumption by cutting off or reducing a current which flows from a power supply synchronizing with a chip enable signal while a substrate voltage generating circuit stops oscillating. CONSTITUTION:Dynamic memory cell of a MISFET semiconductor device consists of timing signal generating circuit 8, address buffer 3, dynamic memory cell 5, substrate voltage generating circuit 13, etc. This cell 1 is externally controlled and then put in an operation or stand-by state by chip enable signal CE varying betweel low and high levels; and a word line is selected by a timing pulse outputted by timing pulse generating circuit 9 synchronizing with signal CE and while circuit 13 stops oscillating, a current from a power supply is cut off or reduced by controlling control elements of circuit 13 to control self-oscillation by a stationary current, so that while oscillation operation is definitely carried out with small power consumption, the substrate voltage will be controlled. |
