发明名称 LASER LETTERRPRINTING METHOD
摘要 PURPOSE:To produce semiconductor wafers having high quality letters printed thereon and useful for management by manufacturing lots by performing the letter printing using laser light following slicing and lapping, and removing slags or the like detects occurring in the surface of the wafers by means of etching. CONSTITUTION:In the process of manufacturing semiconductor wafers, ingots are sliced and lapped. Then the wafer is irradiated by focused laser light to print dot- like letter thereon. As a result, small and fine slags usually occur in the surface of the wafer. After such defective wafer has been treated with etching using acids in order to remove the slags 6 and made free of any distortions, the resulting wafer is subjected to polishing. By these processes it is made possible to have the wafers completely free of the slags or the like detects and with the letters as originally printed, though the printed letters have become a little thicker. The above method of working semiconductor wafers is useful for management by lots of subsequent manufacturing processes.
申请公布号 JPS5541726(A) 申请公布日期 1980.03.24
申请号 JP19780114387 申请日期 1978.09.18
申请人 发明人
分类号 B41J2/44;B41M5/26;B41M5/382;B41M5/46;H01L21/302;H01S3/00 主分类号 B41J2/44
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