| 摘要 |
PURPOSE:To prevent the degradation of pressure resistance characteristics, electrical characteristics, and the like by covering the surface of a semiconductor wafer to which a jig is stuck and from which it is removed by the use of wax; and by preventing the contamination generated at the time of said process. CONSTITUTION:Quick drying resin 4 whose thickness is about 100mum is uniformly applied on the surface of a semiconductor wafer 1. A fixing jig 2 for abrasion is heated to about 80 deg.C and low-melting-point wax 3 is melted on the surface of the jig 2. Then, the surface of the resin 4 on the wafer 1 is pressed onto the wax 3 and closely contacted by cooling them to a room temperature. Thereafter, the specified abrasive process is performed and abrasive material stuck to the jig 2 is removed by sufficiently washing it by water. Then, the jig 2 is heated to 80 deg.C again to melt the wax 3 and remove the wafer 1 with the resin still being stuck thereto. Then, the resin 4 is removed from the wafer 1, together with the wax 3 which is stuck to the resin 4, and ultra-sonic wave cleaning is performed in organic solvent.
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