| 摘要 |
PURPOSE:To prevent luminous diodes from exothermic deterioration by making an epitaxial layer from a chrome-containg semiisolation layer, an n-type GaAsP mixed crystal epitaxial layer, a p-type inter-row isolation layer. CONSTITUTION:On the surface of a single crystal substrate is formed a GaAsP crystal mixing ratio variable layer 2. When the crystal mixing ratio reaches a requred value a semiisolation layer 3 is formed by adding some chrome with a low diffusion velocity, on this layer is formed an n-type GaAsP actuating layer containing impurities such as Te, S, etc. and a p-type isolation layer which separetes rows from each other is made by selectively diffusing p-type imputies. In this way chrome does not diffuse into the n-type GaAsP crystal-mixing-ratio-constant layer 5 by heat treatment, enough thickness is given and luminous diodes can be prevented from exothermic deterioration. |
