发明名称 |
Organic el device and method of manufacturing organic EL device |
摘要 |
A method of manufacturing an organic EL device includes: irradiating a light-emitting region of the organic EL device which includes a defective portion with a laser beam under a first irradiation condition; observing a state of an irradiation mark formed in the light-emitting region through the irradiation with the laser beam in the irradiating under a first irradiation condition; determining a second irradiation condition for resolving a defect caused by the defective portion, based on the first irradiation condition and the observed state of the irradiation mark; and irradiating the light-emitting region with a laser beam under the second irradiation condition determined in the determining of a second irradiation condition. |
申请公布号 |
US9112187(B2) |
申请公布日期 |
2015.08.18 |
申请号 |
US201114005866 |
申请日期 |
2011.06.08 |
申请人 |
JOLED INC. |
发明人 |
Hiraoka Tomomi;Segawa Yasuo |
分类号 |
H01L51/56;H01L51/52 |
主分类号 |
H01L51/56 |
代理机构 |
Greenblum & Bernstein, P.L.C. |
代理人 |
Greenblum & Bernstein, P.L.C. |
主权项 |
1. A method of manufacturing an organic electroluminescence (EL) device, the method comprising:
irradiating a light-emitting region of the organic EL device with a laser beam under a first irradiation condition, the light-emitting region including a defective portion; capturing an image of a state of an irradiation mark provided in the light-emitting region through the irradiation with the laser beam under the first irradiation condition; determining a second irradiation condition for resolving a defect caused by the defective portion, based on the first irradiation condition and the captured state of the irradiation mark; and irradiating the light-emitting region with a laser beam under the second irradiation condition determined in the determining of the second irradiation condition wherein the defective portion is a shorted area between an anode and a cathode of the organic EL device, in the irradiating under the second irradiation condition, the laser beam is emitted in a form of a closed line surrounding the shorted area of the light-emitting region so that a resistance value of a portion located on the closed line form is higher than a resistance value of the portion before the irradiation with the laser beam, and in the irradiating under the first irradiation condition, the laser beam is emitted to an inside of a region that is to be surrounded by the closed line. |
地址 |
Tokyo JP |