发明名称 Organic el device and method of manufacturing organic EL device
摘要 A method of manufacturing an organic EL device includes: irradiating a light-emitting region of the organic EL device which includes a defective portion with a laser beam under a first irradiation condition; observing a state of an irradiation mark formed in the light-emitting region through the irradiation with the laser beam in the irradiating under a first irradiation condition; determining a second irradiation condition for resolving a defect caused by the defective portion, based on the first irradiation condition and the observed state of the irradiation mark; and irradiating the light-emitting region with a laser beam under the second irradiation condition determined in the determining of a second irradiation condition.
申请公布号 US9112187(B2) 申请公布日期 2015.08.18
申请号 US201114005866 申请日期 2011.06.08
申请人 JOLED INC. 发明人 Hiraoka Tomomi;Segawa Yasuo
分类号 H01L51/56;H01L51/52 主分类号 H01L51/56
代理机构 Greenblum & Bernstein, P.L.C. 代理人 Greenblum & Bernstein, P.L.C.
主权项 1. A method of manufacturing an organic electroluminescence (EL) device, the method comprising: irradiating a light-emitting region of the organic EL device with a laser beam under a first irradiation condition, the light-emitting region including a defective portion; capturing an image of a state of an irradiation mark provided in the light-emitting region through the irradiation with the laser beam under the first irradiation condition; determining a second irradiation condition for resolving a defect caused by the defective portion, based on the first irradiation condition and the captured state of the irradiation mark; and irradiating the light-emitting region with a laser beam under the second irradiation condition determined in the determining of the second irradiation condition wherein the defective portion is a shorted area between an anode and a cathode of the organic EL device, in the irradiating under the second irradiation condition, the laser beam is emitted in a form of a closed line surrounding the shorted area of the light-emitting region so that a resistance value of a portion located on the closed line form is higher than a resistance value of the portion before the irradiation with the laser beam, and in the irradiating under the first irradiation condition, the laser beam is emitted to an inside of a region that is to be surrounded by the closed line.
地址 Tokyo JP