| 摘要 |
PURPOSE:To raise the accuracy of lifting-off, by coating a resist on a substrate, performing heat treatment under such conditions before exposure that the surface part of the resist is provided with a heterogenous layer of lower development speed than the internal part of the resist, and performing excessive etching in development. CONSTITUTION:A resist pattern 31 is made on the substrate 11. A film 32 of Al, Au, Ti, Cr or the like is coated on the resist pattern 31 and the substrate 11 by evaporation, ion beam deposition or the like with flying atoms or molecules of directivity. The pattern 31 is then partly removed together with the upper film 32 by a removing liquid so that another pattern 33 is made of only the film 32 coated on the substrate 11. To effect this process, each part of the resist pattern 31 must be shaped like an inverted truncated pyramid. Therefore, the resist is previously baked at a higher temperature for a longer time than in conventional cases to decrease the development speed of the resist toward the surface. Each part of the resist is thereafter excessively etched to the form of the inverted truncated pyramid. |
