发明名称 SUBSTRATE BIAS GENERATOR CIRCUIT
摘要 An "on chip" substrate bias generator circuit to automatically compensate for threshold variations of devices that form a MOS circuit. The substrate bias generator includes a voltage doubler (or trippler) to develop a wide range of negative bias voltage to be fed back via the substrate to the MOS circuit to provide uniform bias control of the circuit devices.
申请公布号 JPS5529198(A) 申请公布日期 1980.03.01
申请号 JP19790104889 申请日期 1979.08.15
申请人 ROCKWELL INTERNATIONAL CORP 发明人 GEARII RII HAIMUBIGUNAA;ROBAATO KENESU BUUHA
分类号 H01L27/04;G05F3/20;G11C11/407;H01L21/822 主分类号 H01L27/04
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