发明名称 |
SUBSTRATE BIAS GENERATOR CIRCUIT |
摘要 |
An "on chip" substrate bias generator circuit to automatically compensate for threshold variations of devices that form a MOS circuit. The substrate bias generator includes a voltage doubler (or trippler) to develop a wide range of negative bias voltage to be fed back via the substrate to the MOS circuit to provide uniform bias control of the circuit devices. |
申请公布号 |
JPS5529198(A) |
申请公布日期 |
1980.03.01 |
申请号 |
JP19790104889 |
申请日期 |
1979.08.15 |
申请人 |
ROCKWELL INTERNATIONAL CORP |
发明人 |
GEARII RII HAIMUBIGUNAA;ROBAATO KENESU BUUHA |
分类号 |
H01L27/04;G05F3/20;G11C11/407;H01L21/822 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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