发明名称 SEMICONDUCTOR EMITTER FOR ION SOURCE
摘要 PURPOSE:To prepare the semiconductor emitter easily and to improve the mechanical intensity, ionization efficiency and quantity of keeping sample by standing a multiplicity of semiconductor whiskers on the surface of conductive base substance to make them electrodes. CONSTITUTION:The semiconductor emitter E is a multiplicity of silicon whiskers stood on the conductive surface of tungsten as a base metal through gold plating. For the base material, tantalum can be used in place of tungsten, silicon or germanium can also be used in place of metal, and glass and plastics which are metal- coated can be used to improve the processing efficiency.
申请公布号 JPS5525942(A) 申请公布日期 1980.02.25
申请号 JP19780098574 申请日期 1978.08.12
申请人 OSAKA DAIGAKUCHIYOU 发明人 MATSUO TAKEKIYO;KOUKUSE MASAO;MATSUDA HISASHI
分类号 H01J1/02;H01J49/16 主分类号 H01J1/02
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