发明名称 |
METHOD AND APPARATUS FOR DEPOSITING THIN LAYERS OF INSULATING OR HTLY CONDUCTIVE MATERIALS BY REACTIVE SPRAYING IN A HIGH-FREQUENCY CTIVE PLASMA |
摘要 |
<p>A method and apparatus for depositing thin layers of insulating or slightly conductive materials involves reactive spraying through high-frequency inductive plasma. The conductive component of the material to be deposited is sprayed in a first chamber through which an ionizable inert gas travels, the sprayed particles then passing through a second chamber in which a substrate is placed and to which a reactive gas is supplied. Insulating and weakly inductive materials such as oxides, carbide and nitrides may be deposited at a rate substantially comparable with the rate for conductive materials to obtain high qualify uniform deposits.</p> |
申请公布号 |
CA1071936(A) |
申请公布日期 |
1980.02.19 |
申请号 |
CA19750240359 |
申请日期 |
1975.11.21 |
申请人 |
EUROPEAN ATOMIC ENERGY COMMUNITY (EURATOM) |
发明人 |
BEUCHERIE, PIERRE |
分类号 |
C23C14/08;C01B13/14;C23C14/00;C23C16/50;H01B3/00;H01G4/33;(IPC1-7):05B5/00 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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