| 摘要 |
PURPOSE:To form a static capacity by using a lamination body of an n-type Si and Pt as the lower electrode through an insulation film on an Si substrate, a lamination body of an n-type Si and Mo as the upper electrode and further utilizing a multilayer insulated film having the same material as a gate film. CONSTITUTION:A field oxidization film is formed to be buried on a p-type Si substrate face, and an n<+>Si is laminated to be covered with Pt. An n<+>Si made electrode or leads 4 and 5 are formed on the bury layer by a selective etching. Successively, a multilayer insulation film of SiO26, Si3N47 and SiO28 is formed to laminate a p<+>Si9 and Mo layer 10. Next, a gate electrode 15 and static capacity 10 are formed by a selective etching, and a diffusion is provided from an opening 11 and 12 to form n<+>layers 13 and 14. Successively, an SiO2layer 16 is covered to selectively attach an Al electrode 18. According to such a method, a MISFET and static capacity can be formed on a same substrate through a similar process and the function of a device be also diversified. |
