MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:For eliminating stage at opening section, to make melt-flow in the atmosphere of impurities and to etch the whole surfaces at least of said opening section and peripheral section of said opening section. CONSTITUTION:The low melting point glass insulating film 27 containing conductor-forming impurities is formed on a semiconductor substrate 25 and a contact opening is provided. Next, said substrate 25 is heat-treated in the oxidative atmosphere containing the same kind of impurities as that contained in said insulating film 27 for melt flow. Thereafter, a thin part over the whole range of said insulating film 29 formed at said contact opening is removed.