| 摘要 |
PURPOSE:To reduce consumed power, by providing non-volatile memory regions which have bits corresponding to those of channel regions and are and adjacent thereto and by transferring signal charge from the channel regions and storing the charge in the memory regions and by reading the charge and returning it to the original position if necessary. CONSTITUTION:An insulator film 2 of non-uniform thiskness is provided on a semiconductor substrate 1. Capacity gates 51, 52 are embedded in thick protions of the insulator film 2, thereby producing the non-volatile memory regions 61, 62 in the surface layer of the substrate 1 under the gates 51, 52. Insulated regions 4 are provided in the surface layer of the substrate under thick portions of the insulator film 2 except in the regions 6a, 62. The channel regions 31, 32 are provided in the surface layer of the substrate 1 under thin portions of the insulator film 2 adjacently to the memory regions 61, 62. A transfer gate 7n is coated on the entire surface of the film 2. A clock signal phis is applied to the memory regions 61, 62 to transfer signal charge and store it in the regions 31, 32. Another clock signal phic is applied to the regions 61, 62 to read and return the signal charge. |
