发明名称 METHOD OF FORMING MULTILAYER DISTRIBUTING LAYER
摘要 PURPOSE:To make needless of etching to form throughholes by removing hotresist membrane after attaching hotresisting membrane over the area for forming throughholes of a distributing layer and laminating the layer insulators by means of anodic oxidation of the distributing layer surface. CONSTITUTION:To attach hotresist membrane 15 over the area for forming the prescribed throughholes of the distributing area 11 which is formed on the base 12 using the metal such as Al etc. capable of anodic oxidation, and then to perform anodic oxidation 13 of the surface of the distributing layer 11. Next, after forming by lamination a layer insulating layer such as a silicon oxide layer etc. made by a spattering method, the hot resist membrane 15 will be removed with resist stripping fluid to form the required throughholes 17. By doing so, there is no need of etching with hydrofluoric etching fluid for forming throughholes, a damage of distributing pattern as well as the generation of oxidised membrane will be prevented to provide multilayer distributing layer of high quality.
申请公布号 JPS5516433(A) 申请公布日期 1980.02.05
申请号 JP19780089240 申请日期 1978.07.21
申请人 发明人
分类号 H05K3/46;H01L21/768;H01L23/522;H05K3/00 主分类号 H05K3/46
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