发明名称 MIS FIELD EFFECT SEMICONDUCTOR CIRCUIT DEVICE
摘要 PURPOSE:To perform a large-amplitude oscillation with a low power consumption by constituting an oscillator circuit by an enhancement-mode MIS element a bootstrap capacity and a precharging MIS element. CONSTITUTION:The gate of bootstrap capacity Q35 and the source of precharging MIS element Q34 are connected to the gate of MIS element Q10 of the load of an inverter which is not dynamic-type. Then, the source of element Q10 and left electrodes of bootstrap capacity Q35 are connected, and the drain of element Q10, the gate of element Q34 and the drain of element Q34 are connected to power source VDD commonly. As a result, a large-amplitude oscillation can be performed with a low power consumption by the oscillator circuit constituted by the enhancement- mode MIS element.
申请公布号 JPS5513566(A) 申请公布日期 1980.01.30
申请号 JP19780086098 申请日期 1978.07.17
申请人 HITACHI LTD 发明人 SATOU KATSUYUKI
分类号 G11C11/407;H01L21/822;H01L27/04;H01L29/78;H03H11/26;H03K3/02;H03K3/03;H03K3/353;H03K3/354;H03K5/00;H03K5/13;H03K5/15;H03K5/151;H03L7/00 主分类号 G11C11/407
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