| 摘要 |
PURPOSE:To produce an FET comparison electrode, which is excellent in its water- resisting property, by forming a non-ion high molecular film having a thickness of 300 to 5000 Angstrom due to the polymerization of ultraviolet rays at the gate portion of a gate insulating type FET transistor. CONSTITUTION:An IG FET which has its gate surface rinsed is accommodated in a container having a transmissivity to ultraviolet rays (in the wavelength of about 2000 to 3000 Angstrom ). After evacuated, the system is supplied with non-ion monomer vapors under a vacuum pressure of 1 to 100 mm Hg and is exposed to the ultraviolet rays so that the polymerization is effected at 20 to 500 deg.C (preferably 100 to 300 deg.C) for one to ten hours thereby to form the gate portion with a high molecular film having a thickness of 300 to 5000 Angstrom . As the aforementioned non-ion monomer, a chemical as specified by Formula I (wherein: X1 to X4 stand for H, Cl, F excepting the case in which all are H) or Formula II (wherein: X1 to X6 stand for H, Cl, F or alkyl of C1-3). It is desired that before the polymerization with the ultraviolet rays the gate portion of the FET be treated with a silane treating agent containing vinyl radical. |
