发明名称 Thin film strain gage and process therefor
摘要 A thin film strain gage is deposited on a flexure beam under controlled deposition conditions such that the dielectric parts thereof are normally in a compressive state. During use, when the strain gage is flexed in a manner tending to place parts thereof in tension, the dielectric parts are instead maintained either in compression, which is their more resistant state against mechanical fracture, or only in slight tension. Specifically, the dielectric films are deposited by sputtering with the substrate negatively biased, with the deposition rate and substrate temperature maintained at predetermined levels for enhancing compressive deposition.
申请公布号 US4185496(A) 申请公布日期 1980.01.29
申请号 US19780937413 申请日期 1978.08.28
申请人 GOULD INC 发明人 BOLKER, BARRY F T;TISONE, THOMAS C
分类号 G01B7/16;G01L1/22;(IPC1-7):G01L1/22 主分类号 G01B7/16
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