| 摘要 |
PURPOSE:To increase the quantity of base wafers to be processed, by detecting the amount of consumption of raw material gas inside a reaction furnace at high sensitivity, supplying the amount of consumption uniformly in the direction of gas flow, and growing a silicon layer to a fixed thickness. CONSTITUTION:Si base 41 is mounted on heating jig 42 of reaction furnace 43. Raw naterial gas is supplied through pipe systems 70, 49, and a silicon layer is grown on base 41 inside reaction furnace 43. By means of capillary 72 provided at the end of reaction gas outlet 46 of reaction furnace 43, a part of raw material gas is taken out and sent to analyzer 77 via condensers 73, 74. Here, the concentration of each raw material of reaction gas is measured with high precision. By operating flow control devices 65, 66 in accordance with the measured raw material consumption, furnace gas concentration correction nozzles 47, 48, which are provided inside reaction furnace 43 and which supplies each raw material independently, are actuated. Thus, the thickness of silicon layers of a large quantity of base 41 is grown uniformly. |
